2019 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2019)

Summary

This document contains the official program and guide for the 56th Annual IEEE Nuclear and Space Radiation Effects Conference (NSREC 2019), held July 8–12, 2019, at the San Antonio Marriott Rivercenter in San Antonio, Texas. It details the technical program, short course sessions, Radiation Effects Data Workshop, poster presentations, invited talks, social events, exhibitor directory, and registration information. The conference addresses radiation effects, single-event effects (SEE), total ionizing dose (TID), hardening by design, and hardness assurance for microelectronics in space and terrestrial environments.

Cover Page

Sponsored by: IEEE/NPSS Radiation Effects Committee

Supported by: Aerospace Corporation BAE Systems Boeing Cobham Harris Intersil Space Products IR HiRel Products, An Infineon Technologies Co. Jet Propulsion Laboratory Southwest Research Institute VPT

NSREC 2019 San Antonio

July 8 - 12, 2019 San Antonio Marriott Rivercenter San Antonio, TX

IEEE Nuclear and Space Radiation Effects Conference

Marriott Rivercenter Floorplan

MARRIOTT RIVERCENTER

Grand Salons & Layout:

Salons A, B, F: Breakfast, Lunch (Monday); Poster/Workshop Boards (Tuesday - Friday)
Salons C, D, E: Short Course (Monday); Technical Sessions (Tuesday - Friday); Open Meeting (Thursday)
Salons G, H, I, J, K, L, M: Industrial Exhibits (Tuesday - Wednesday); Breakfast, Morning/Afternoon Breaks; Exhibit Lunch (Wednesday); Industrial Exhibits Reception (Tuesday Evening)
Grand Salon H-I: Welcome Reception (Sunday)

Level Three / Meeting Rooms:

Registration Desk 1: Pre-Registration (Sunday - Tuesday)
Registration Desk 2: Onsite Registration (Saturday - Friday)
Conference Rooms 1-4, 5-6, 7-12, 13-16: A/V Preview Room, Side Meetings, Aerobics (Tuesday - Thursday)
Conference Rooms 17 & 18: Steering Group Meeting (Sunday); Young Professionals Breakfast (Thursday); Women in Engineering Lunch (Thursday); Awards Cmte Working Lunch (Friday)

Schedule Overview

Schedule

Monday, July 8:

7:00: Breakfast – Salons A-B-F
8:00: Short Course Introduction (Dr. Steven Moss, Grand Salons C-D-E)
8:10: Part I – Basics of Single Event Effect Mechanisms and Predictions (Dr. Daisuke Kobayashi)
9:40: Break – Grand Pre-Function
10:10: Part II – SEE Testing with Broad and Focused Particle Beams (Dr. Arto Javanainen)
11:40: Short Course Luncheon – Grand Salons A-B-F
1:00: Part III – Photon-Based SEE Testing / Part IIIA – Laser-Based Testing for SEE (Dr. Dale McMorrow)
2:00: Part IIIB – Current Status and Future Prospects for Pulsed X-Ray SEE Testing (Mr. Stephen LaLumondiere)
2:50: Break – Grand Pre-Function
3:20: Part IV – SEE Test and Analysis of Complex Devices in Advanced Technologies: From Cells to Systems (Mr. Manuel Cabanas-Holmen)
4:50: Wrap-up
5:00: Exam (for students requesting CEU credit only)
5:30: End of Short Course

Tuesday, July 9:

7:00: Breakfast – Salons G-M (Exhibits)
8:20: Opening Remarks / Awards Presentation (Salons C-D-E)
9:00: Session A – Single Event Effects: Mechanisms and Modeling
10:05: Session B – Single Event Effects: Transient Characterization
10:55: Break – Salons G-M
11:25: Session C – Single Event Effects: Devices and Integrated Circuits
12:30: Lunch
2:20: Session D – Dosimetry
3:10: Break – Salons G-M
3:40: Session E – Space and Terrestrial Environments
4:15: End of Tuesday Sessions
5:30 to 7:00: Industrial Exhibits Reception – Salons G-M

Wednesday, July 10:

7:00: Breakfast – Salons G-M (Exhibits)
8:20: Invited Talk – Automated Vehicles and the Road Ahead (Chris Mentzer, Salons C-D-E)
9:35: Session F – Basic Mechanisms
10:25: Break – Salons G-M
10:55: Session G – Radiation Effects in Devices and Integrated Circuits
12:30: Exhibitor Lunch – Salons G-M
1:30: Exhibitor Raffle Drawing
2:00-4:45: Radiation Effects Data Workshop – Salons A-B-F
4:45: End of Wednesday Sessions
6:00 to 10:00: Conference Social – Buckhorn/Texas Ranger Museum (Busses start at 5:30)

Thursday, July 11:

7:00-8:30: IEEE Young Professionals Breakfast – Conference Rooms 17 & 18 (YP talk begins at 7:30 AM, Ticket Required)
7:00: Breakfast – Salons A-F (Pre-Function)
8:30: Invited Talk – Parker Solar Probe: A Mission to Touch the Sun (Dr. Jim Kinnison, Salons C-D-E)
9:45: Session H – Photonic Devices and Integrated Circuits
10:35: Break – Salons A-F Pre-Function Area (Foyer)
11:05: Session H – (continued)
12:05: Lunch — and — Women in Engineering Lunch – Conference Rooms 17 & 18 (Ticket Required)
1:45-4:30: Poster Session – Salons A-B-F
4:30: End of Thursday Sessions
4:30 to 6:30: Radiation Effects Committee Annual Open Meeting – Salons C-D-E

Friday, July 12:

7:00: Breakfast – Salons A-F (Pre-Function)
8:30: Invited Talk – Spanish Exploration and the Beginnings of Texas Natural History (Dr. Jesús F. de la Teja, Salons C-D-E)
9:45: Session I – Hardening by Design
10:35: Break – Salons A-F Pre-Function Area (Foyer)
11:05: Session J – Hardness Assurance
12:25: End of Conference

Contents

Chairman’s Invitation … . . 1 Short Course Program … . . 2 Short Course … . . 3 Course Description … . . 3 Part 1 – Basics of Single Event Effect Mechanisms and Predictions … . . 4 Part 2 – SEE Testing with Broad and Focused Particle Beams … . . 5 Part 3A – Laser-Based Testing for SEE … . . 6 Part 3B – The Current Status and Potential of Pulsed X-Rays as a High Resolution Probe for Single Event Effects Testing … . . 7 Part 4 – SEE Test and Analysis of Complex Devices in Advanced Technologies: From Cells to Systems … . . 8 Technical Program … . . 9 Technical Information … . . 9 Invited Speakers … . . 9 Late-News Papers … . . 9 Session Chairs … . . 10 Tuesday, July 17 [July 9] … . . 11 Session A - Single Event Effects: Mechanisms and Modeling … . . 11 Session B - Single Event Effects: Transient Characterization … . . 12 Session C - Single Event Effects: Devices and Integrated Circuits … . . 13 Session D - Dosimetry … . . 15 Session E - Space and Terrestrial Environments … . . 17 Wednesday, July 18 [July 10] … . . 19 Invited Talk - Automated Vehicles and the Road Ahead … . . 19 Session F - Basic Mechanisms … . . 19 Session G - Radiation Effects in Devices and Integrated Circuits … . . 21 Radiation Effects Data Workshop … . . 23 Thursday, July 19 [July 11] … . . 32 Invited Talk - Parker Solar Probe: A Mission to Touch the Sun … . . 32 Session H - Photonic Devices and Integrated Circuits … . . 32 Poster Session … . . 35 Friday, July 20 [July 12] … . . 36 Invited Talk - Spanish Exploration and the Beginnings of Texas Natural History … . . 36 Session I - Hardening by Design … . . 36 Session J - Hardness Assurance … . . 38 RESG NEWS … . . 41 Awards … . . 43 2018 NSREC Awards … . . 43 2019 Radiation Effects Award … . . 44 Conference Information … . . 45 Breakfasts, Lunch and Breaks … . . 45 Business Center … . . 45 Rooms for Side Meetings … . . 45 Child Care Reimbursement … . . 46 Registration and Travel … . . 47 Conference Registration … . . 47 On-Site Registration Hours … . . 47 Conference Cancellation Policy … . . 47 Hotel Reservations and Information … . . 48 Airport and Transportation Information … . . 49 Driving Directions and Parking … . . 50 Getting Around Town … . . 50 Industrial Exhibits … . . 52 2019 IEEE NSREC Technical Sessions and Short Course Registration Form … . . 54 2019 IEEE NSREC Activities Registration Form … . . 56 Social Program … . . 57 Industrial Exhibits Reception … . . 59 Buckhorn / Texas Rangers Museum - Conference Social … . . 60 Local Activities … . . 65 2019 Conference Committee … . . 71 Official Reviewers … . . 72 Radiation Effects Steering Group … . . 73 2020 Announcement and First Call for Papers … . . 74

Chairman’s Invitation

On behalf of the Institute of Electrical and Electronics Engineers (IEEE), its Nuclear and Plasma Sciences Society (NPSS), the Radiation Effects Steering Group (RESG) and the 2019 Nuclear and Space Radiation Effects Conference (NSREC) committee and volunteers, it is my pleasure to invite you to attend the 56th NSREC to be held July 8-12, 2019. The conference will be in my hometown of San Antonio, Texas at the Marriott Rivercenter hotel.

The conference begins Monday, July 8, with a one-day Short Course titled “Predicting, Characterizing, and Mitigating SEE in Advanced Semiconductor Technologies.” It is organized by Steve Moss, Aerospace Corporation (retired), and consists of four sections (in five talks) taught by leading experts in their respective fields. The short course is designed to provide a broad overview of Single Event Effects (SEE) topics including an introduction to SEE sources and mechanisms, an overview of established and developing SEE test techniques, and issues therewith, and an introduction to the techniques used and challenges faced in designing for and proving SEE resilience. An extensive set of written notes (provided in a CD or Memory stick) is sure to become a valued technical reference.

The Technical Program will be held from Tuesday, July 9 to Friday, July 12. Simone Gerardin, University of Padova, is the Technical Program Chair. He, along with his technical committee, have chosen an outstanding set of contributed papers organized into 10 sessions of oral presentations and a poster session encompassing papers from all 10 sessions. In addition, the technical committee has selected a set of high quality presentations for the Radiation Effects Data Workshop. Workshop posters will present radiation effects data on electronic and photonic devices and systems, and new simulation or test facilities. Finally, Simone has invited three engaging speakers to give general interest presentations from Wednesday through Friday.

The Industrial Exhibit, organized by Gregg Panning, Aerospace Corporation, opens Tuesday morning. It will allow one-on-one discussions between conference attendees and exhibitors on the latest developments in areas such as radiation-hardened and radiation-tolerant electronics, engineering services, facilities, modeling, and equipment. Attendees will be able to visit the booths during scheduled breaks and, with their guests, are invited to a reception in the exhibit halls on Tuesday evening. The exhibits will conclude at noon Wednesday with a luncheon for attendees only.

Local Arrangements Chair, Brian Sierawski, Vanderbilt University, has organized an outstanding social program. The Conference Social, on Wednesday evening, will provide some of the flavor of San Antonio with western entertainment and a Tex-Mex Buffet at the Buckhorn / Texas Rangers Museum. Two companion tours are also scheduled. The first event, on Tuesday, will include a visit to the Alamo, a narrated riverboat ride through downtown and up the San Antonio River to the Pearl redevelopment for lunch (on your own), and a post lunch visit to the Witte Museum of Natural History. The second event, on Thursday, will include a guided visit to several of the UNESCO World Heritage Site San Antonio Missions, as well as lunch (on your own) at San Antonio’s El Mercado (Mexican Market.)

I, along with the committee members mentioned above and the remainder of the NSREC 2019 Conference Committee, including Publicity Chair Teresa Farris (Archon-LLC), Finance Chair Michael Campola (NASA GSFC), Awards Chair Christian Poivey (ESA), Poster Chair Ethan Cannon (Boeing), and Radiation Effects Data Workshop Chair Kirby Kruckmeyer (Texas Instruments), welcome you to San Antonio, at 301 years old, one of America’s most unique cities.

We look forward to seeing you in San Antonio this July.

John M. Stone NSREC 2019 General Chair Southwest Research Institute

Visit us on the web at: www.nsrec.com

Short Course Program

PREDICTING, CHARACTERIZING, AND MITIGATING SEE IN ADVANCED SEMICONDUCTOR TECHNOLOGIES MARRIOTT RIVERCENTER GRAND SALONS C-D-E – MONDAY, JULY 8, 2019

8:00 AM: SHORT COURSE INTRODUCTION (Dr. Steven Moss, The Aerospace Corporation (Rtd))
8:10 AM: PART I – BASICS OF SINGLE EVENT EFFECT MECHANISMS AND PREDICTIONS (Dr. Daisuke Kobayashi, ISAS/JAXA, Japan)
9:40 AM: BREAK (Grand Pre-Function)
10:10 AM: PART II – SEE TESTING WITH BROAD AND FOCUSED PARTICLE BEAMS (Dr. Arto Javanainen, University of Jyväskylä, Department of Physics, Finland)
11:40 AM: SHORT COURSE LUNCHEON (Grand Salons A-B-F)
1:00 PM: PART III – PHOTON-BASED SEE TESTING
- PART IIIA – LASER-BASED TESTING FOR SEE (Dr. Dale McMorrow, US Naval Research Laboratory, USA)
2:00 PM: PART IIIB – CURRENT STATUS AND FUTURE PROSPECTS FOR PULSED X-RAY SEE TESTING (Mr. Stephen LaLumondiere, The Aerospace Corporation, USA)
2:50 PM: BREAK (Grand Pre-Function)
3:20 PM: PART IV – SEE TEST AND ANALYSIS OF COMPLEX DEVICES IN ADVANCED TECHNOLOGIES: FROM CELLS TO SYSTEMS (Mr. Manuel Cabanas-Holmen, Boeing Research and Technology, USA)
4:50 PM: WRAP-UP
5:00 PM: EXAM (only for students requesting CEU credit)
5:30 PM: END OF SHORT COURSE

Short Course attendees will receive an electronic copy of the 2019 Short Course Notes.

Short Course Description & Chairman

COURSE DESCRIPTION: A one-day short course, “Predicting, Characterizing, and Mitigating SEE in Advanced Semiconductor Technologies,” will be presented at the 2019 IEEE Nuclear and Space Radiation Effects Conference (NSREC). The course will discuss single event effects (SEE) that occur in components used in space systems. The past four decades have seen our understanding of the range of SEE experienced by space systems expand substantially as more modern devices have been exposed to the space radiation environment. Vulnerabilities of devices today are much more complicated than in the past, and those vulnerabilities continue to threaten space systems as parts are scaled, new materials are used, devices become faster, and new mechanisms are discovered.

This short course is organized into four sections. It includes an up-to-date overview of SEE mechanisms and rates; discussions of various methods to test for SEE and isolate sensitive nodes; and a discussion of SEE in advanced components, and the challenges posed by some of these components for our test methodologies. All of the testing presentations will show case studies, indicate how the techniques are used to isolate susceptible nodes, discuss correlations between particle tests and photon tests, and indicate how the test methodologies point to strategies for mitigation.

CONTINUING EDUCATION UNITS (CEUS): For those interested in Continuing Education Units (CEUs), an open book exam will be held at the end of the course. The course, endorsed by the IEEE and by the International Association for Continuing Education and Training (IACET), is valued at 0.6 CEUs.

SHORT COURSE CHAIRMAN: Steven C. Moss is retired from the Electronics & Photonics Laboratory at The Aerospace Corporation in Los Angeles, CA. He received a BS Degree (physics, mathematics) from Arkansas A&M College (1970), an MS Degree (physics) from Purdue University (1972), and a PhD Degree (physics) from North Texas State University (1981). He was a National Research Council Postdoctoral Research Associate at the US Naval Research Laboratory (1981-1982). His research interests include the use of ultrashort optical pulses to simulate the transient effects of ionizing radiation on microelectronic devices, transient photoluminescence from materials and advanced devices, permanent damage produced by radiation effects in microelectronic/optoelectronic devices, and reliability and physics of failure of advanced microelectronic/optoelectronic devices. Dr. Moss is a member of ACS, AAAS, AAPT, MRS, and SPIE. Dr. Moss is a life member of APS and OSA, and is a Life Senior Member of IEEE. He is an Associate Editor for IEEE TNS and serves on the Editorial Board for MRS Bulletin.

Short Course Monday - Part I

BASICS OF SINGLE EVENT EFFECTS MECHANISMS AND PREDICTIONS Dr. Daisuke Kobayashi, ISAS/JAXA

Dr. Daisuke Kobayashi, ISAS/JAXA, will provide basic knowledge of SEE mechanisms and rates that will underlie this year’s short course. More than three decades have passed since the term “single-event” appeared for the first time in the titles of NSREC short course presentations. In 1983, two lecturers used “single-event upsets”. Since then this research topic has evolved to be very wide and complex, so that we are now collectively calling the field of investigation “single-event effects.” This presentation will be useful, in particular for those who are new to this field, to see how SEE have evolved along with the diversity of processes and circuitry in semiconductor parts and their environments. Parts are now fabricated with various materials, such as tungsten and copper and soon cobalt, with complex circuits like radiation-hardened latches. They must withstand the bombardment of heavy ions, protons, electrons, neutrons, muons, photons, etc. The complexity of the mechanisms and predictions is expanding. This talk will provide a foundation for understanding SEE and a background for the remaining presentations in the short course.

Outline: ■ Introduction o An Evolutionary Tree-An Analysis of Course Notes ■ Origin of SEE o First Observations o Basics of Mechanisms and Predictions • Charge Deposition and Collection Mechanisms • Event Rate Predictions ■ Evolution of SEE o Evolution Mechanisms-What Causes the Diversity o Non-Destructive SEE • SEU-From Single Upsets to Hundreds and More • SET-From ns to ps, but still 100 ps? o Destructive SEE • SEL-From Significant to Less? • SEB/SEGR-From V/cm to K ■ Future Perspective ■ Summary

Speaker Bio: Daisuke Kobayashi received the Ph.D. degree from the University of Tokyo in 2005. He joined ISAS/JAXA, where he is now Assistant Professor of Spacecraft Engineering. He was an Associate Editor of IEEE Transactions on Nuclear Science from 2015 to 2017.

Short Course Monday - Part II

SEE TESTING WITH BROAD AND FOCUSED PARTICLE BEAMS Dr. Arto Javanainen, Department of Physics, University of Jyväskylä, Finland / Department of EECS, Vanderbilt University, Nashville, TN, USA

Arto Javanainen will discuss issues related with Single Event Effects testing using accelerated particle beams, both broad and focused. Basic physics mechanisms governing the energy deposition and its relation with particle energy will be reviewed. Basic things to be considered when testing with accelerators are addressed. Some of the common pitfalls to avoid when performing SEE tests at particle accelerators will be identified.

Modern technologies with deep submicron feature sizes and low critical charge may exhibit sensitivity to proton direct ionization that can lead to concerns about their susceptibility to muons, hence increased soft error rates in ground level applications. Also SEEs induced by high energy electrons may be a concern for some applications, like those planned for Jupiter missions. What requirements do these issues set for the facilities and the SEE tests in general?

The presentation will introduce different types of facilities available for SEE testing. A non-exhaustive listing of both the conventional broad and also the focused (milli- and micro-) beam facilities, and their general characteristics will be given.

Outline: ■ Introduction ■ Particle-matter interactions o LET o Projected range o Nuclear reactions o Energy deposition in small volumes ■ SEE Testing at facilities o Broad beams o Focussed beams ■ Conclusions

Speaker Bio: Arto Javanainen is a Senior Researcher at University of Jyväskylä (JYU), Finland, and Adjoint Assistant Professor at Vanderbilt University. He received his PhD from JYU in 2012. He is the deputy coordinator in EU Horizon2020 MSCA Innovative Training Network, RADSAGA.

Short Course Monday - Part IIIA

LASER-BASED TESTING FOR SEE Dr. Dale McMorrow, U. S. Naval Research Laboratory

Dr. Dale McMorrow will discuss application of pulsed-laser approaches to SEE testing and evaluation. Charge carrier generation induced by pulsed-laser excitation has become an essential tool for the investigation of SEE in micro- and nano-electronic structures. A primary advantage of laser-based approaches lies in their spatial selectivity: the ability to pinpoint and characterize sensitive nodes of circuits without the damage associated with particle-based radiation sources. This talk will address the fundamental physics associated with both linear- and nonlinear-optical approaches for charge generation in semiconductor materials, followed by examples that illustrate various aspects of the approach, including sensitive node identification, radiation hardened circuit verification (RHBD and RHBP), basic mechanisms investigations, model validation and calibration, screening devices for space missions, and fault injection to understand error propagation in complex circuits. Finally, recent advances in putting laser SEE approaches on a more quantitative basis will be discussed, including progress toward correlating pulsed-laser and heavy-ion measurements.

Outline: ■ Laser-induced single-event effects o Charge generation by optical absorption o Charge density profiles for SPA and TPA o Top side vs. back side excitation o Spatial selectivity ■ History and background o Single Photon Absorption (SPA)/Beer’s Law o Two Photon Absorption (TPA)/Nonlinear pulse propagation and carrier generation ■ Experimental approach o Basic experimental setup o Calibration and dosimetry ■ Selected examples and case studies ■ Recent developments and future considerations

Speaker Bio: Dale McMorrow received his Ph.D. from Florida State University in 1984. He joined the Naval Research Laboratory in 1988 and is currently Head of the Radiation Effects Section. He is an IEEE Fellow and Senior Member of OSA.

Short Course Monday - Part IIIB

THE CURRENT STATUS AND POTENTIAL OF PULSED X-RAYS AS A HIGH-RESOLUTION PROBE FOR SINGLE EVENT EFFECTS TESTING Mr. Stephen LaLumondiere, The Aerospace Corporation

Mr. Stephen LaLumondiere will describe the application of pulsed x-rays for SEE and TID testing of microelectronic devices. Pulsed x-rays from synchrotron-based light sources have recently been demonstrated as a highly effective tool for SEE testing with potentially unprecedented spatial resolution. This part of the short course will describe the background and rationale for synchrotron based x-ray SEE testing. Other potential sources, and their benefits and limitations will be described. A detailed description of the technique, its challenges and limitations will also be presented. Several case studies of pulsed x-ray SEE testing will be detailed, including SETs in linear bipolar devices, wide bandgap materials and the status of work to correlate x-rays with energetic particle LETs. The impact of the Advanced Photon Source (APS) upgrade on future SEE testing activities will also be discussed.

Outline: ■ Introduction ■ Relevant x-ray Sources o Tabletop Lasers o X-ray FELs o Synchrotrons ■ Synchrotron x-ray testing at the Advanced Photon Source o X-ray interactions with materials o X-ray focusing techniques o Typical beamline setup for SEE testing o X-ray Flux calibration ■ Case studies o SETs in wide bandgap materials o SETs in linear bipolar integrated circuits o Work on correlation with energetic particles ■ Other related research ■ Proposal system for accessing synchrotron facilities ■ Impact of the APS upgrade on SEE testing activities

Speaker Bio: Stephen LaLumondiere is a Member of the Technical Staff in the Photonics Technology Department at The Aerospace Corporation (joined 1988).

Short Course Monday - Part IV

SEE TEST AND ANALYSIS OF COMPLEX DEVICES IN ADVANCED TECHNOLOGIES: FROM CELLS TO SYSTEMS Mr. Manuel Cabanas-Holmen, Boeing Research & Technology

Mr. Manuel Cabanas-Holmen will discuss the challenges of SEE testing modern complex devices in advanced semiconductor processing nodes. In modern technologies, standard and Radiation Hardened by Design (RHBD) logic gates, storage elements and macros exhibit strong angular sensitivity that should guide how we test complex devices to avoid naively optimistic results. Fault tolerant microprocessors often have multiple circuit cells and macros with starkly different angular sensitivity, and it is often necessary to perform extensive SEE test campaigns to acquire the data necessary to estimate their error rate. At-speed SEE testing of high performance mixed signal macros, such as Analog-to-Digital Converters (ADC) with high speed interfaces, requires complex instrumentation with continuous data capture and concurrent error detection algorithms. Frequently, it is preferable to synchronize the ADC data capture with the radiation source for a one-to-one correlation of a laser pulse or ion spill with the resulting effect. Advanced packaging solutions using 2.5D and 3D heterogeneous integration increase the complexity of SEE testing many fold by combining multiple complex devices in a single package, without access to the interfaces within the module. The presentation will conclude with a discussion of the challenges to be faced by those testing advanced technologies for susceptibility to SEE.

Outline: ■ Introduction ■ Charge Sharing Effects in Complex Devices o Charge sharing effects of modern bulk technologies o Impacts on radiation hardened cell design o Single Event Multiple Transients (SEMT) ■ Impact of Angular Sensitivity on Complex Devices o Angular sensitivity of modern technologies o Estimating error rates of complex devices with multiple circuit cells and macros with different angular sensitivity ■ At-Speed SEE Testing of High Performance Mixed Signal Macros o SEE testing of mixed signal macros with high speed interfaces o Complex instrumentation with continuous data capture and concurrent error detection ■ Single Photon Absorption (SPA)/Two Photon Absorption (TPA) Laser and Milli-Beam Testing of Complex Devices ■ Advanced Packaging Solutions o 2.5D and 3D Heterogeneous Integration o SEE Testing of 3D stacked memories ■ Conclusions

Speaker Bio: Manuel Cabanas-Holmen is a principal investigator and project lead at Solid State Electronics Development group at Boeing Research & Technology with 20 years of experience in RHBD.

Technical Program Information & Chairs

Technical Program Details: Oral presentations: 12 minutes duration with 3 minutes for questions.

Technical Sessions and Chairpersons:

Basic Mechanisms of Radiation Effects: Chair Lili Ding, NINT
Dosimetry: Chair Anatoly Rosenfeld, Wollongong University
Hardness Assurance: Chair Tom Turflinger, Aerospace Corporation
Hardening by Design: Chair Jeff Kauppila, Vanderbilt University
Radiation Effects in Devices and Integrated Circuits: Chair Indranil Chatterjee, Airbus
Photonic Devices and Integrated Circuits: Chair Vincent Goiffon, ISAE-SUPAERO
Single-Event Effects: Mechanisms and Modeling: Chair Rubén Garcia Alia, CERN
Single-Event Effects: Transient Characterization: Chair Zach Fleetwood, SpaceX
Single-Event Effects: Devices and Integrated Circuits: Chair Balaji Narasimham, Broadcom
Space and Terrestrial Environments: Chair Giovanni Santin, ESA

Poster Session: Displayed in Salons A, B, F on Thursday 1:45–4:30 PM. Chaired by Ethan Cannon (Boeing). Radiation Effects Data Workshop: Displayed in Salons A, B, F Tuesday–Friday; Discussion Wednesday 2:00–4:45 PM. Chaired by Kirby Kruckmeyer (Texas Instruments).

Invited Speakers:

Current status and future development of autonomous vehicles – Chris Mentzer, Southwest Research Institute
The history of and future expectations for the Parker Solar Probe Mission – Jim Kinnison, Johns Hopkins University
People and nature in the early history of San Antonio – Dr. J. F. de la Teja, Regents and University Distinguished Professor Emeritus

Technical Program: Tuesday - Session A

Tuesday, July 9 - Salons C, D, E

8:20 AM: Opening Remarks (John Stone, Southwest Research Institute)
8:25 AM: Awards Presentation (Janet Barth, RESG Executive Chair)
8:55 AM: Technical Session Opening Remarks (Simone Gerardin, Technical Program Chairman)

SESSION A: SINGLE EVENT EFFECTS: MECHANISMS AND MODELING (Chair: Rubén Garcia Alia, CERN)

9:05 AM [A-1]: A Chip-level Single Event Latchup (SEL) Estimation Methodology (A. Neale, N. Seifert, Intel Corporation, USA)
9:20 AM [A-2]: Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Diodes (D. Ball, K. Galloway, R. Johnson, M. Alles, A. Sternberg, B. Sierawski, A. Witulski, R. Reed, R. Schrimpf, Vanderbilt Univ.; J. Hutson, Lipscomb Univ.; J. Lauenstein, NASA GSFC; A. Javanainen, Univ. of Jyväskylä)
9:35 AM [A-3]: Thermal Neutron and Fast Neutron-induced SEEs in Microcontrollers with Suspected 10B (E. Auden, H. Quinn, S. Wender, J. O’Donnell, P. Lisowski, J. George, LANL, USA)
9:50 AM [A-4]: Polarization Dependence of Pulsed Laser Induced SEEs in a FinFET Structure (L. Ryder, K. Ryder, A. Sternberg, J. Kozub, H. Gong, E. Zhang, R. Weller, R. Schrimpf, S. Weiss, R. Reed, Vanderbilt Univ.; D. Linten, J. Mitard, IMEC, Belgium)

POSTER PAPERS (Session A):

[PA-1]: New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles (P. Caron, C. Inguimbert, L. Artola, ONERA; F. Bezerra, R. Ecoffet, CNES)
[PA-2]: Statistical Method to Extract Multiple-Cell Upsets of SRAMbased FPGAs (A. Perez-Celis, M. Wirthlin, BYU)
[PA-3]: Analytical Modeling of Single-Event Upsets in Advanced Technologies (R. Harrington, J. Kauppila, M. Alles, D. Ball, B. Bhuva, L. Massengill, Vanderbilt Univ.)
[PA-4]: Correlation of Sensitive Volumes Associated with Ion- and Laser-Induced Charge Collection in an Epitaxial Silicon Diode (K. Ryder et al., Vanderbilt Univ., NRL, BMTI)
[PA-5L]: Single Event Effect Testing with Xe and Pb Ultra High Energy Heavy Ion Beams (M. Kastriotou et al., CERN, STFC, ESA/Univ. of Jyväskylä)

Technical Program: Tuesday - Session B & Session C

SESSION B: SINGLE EVENT EFFECTS: TRANSIENT CHARACTERIZATION (Chair: Zachary Fleetwood, SpaceX)

10:10 AM [B-1]: Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI (A. Ildefonso et al., Georgia Tech, NRL)
10:25 AM [B-2]: New Approach for Pulsed-Laser Single-Event Effects Testing that Mimics Heavy-Ion Charge Deposition Profiles (J. Hales et al., NRL, Georgia Tech)
10:40 AM [B-3]: Single-Event Transients in SiGe HBTs Induced by Pulsed XRay Microbeam (D. Nergui et al., Georgia Tech, SpaceX, Aerospace Corp.)

POSTER PAPERS (Session B):

[PB-1]: Impact of Interface Quality on Single-Event Charge Collection in Rad-hard SOI MOSFETs (A. Tonigan et al., Vanderbilt Univ., Sandia)
[PB-2]: Single Event Transient Analysis with Ionizing Radiation Effects Spectroscopy (IRES) (B. Patel et al., Univ. of Tennessee Chattanooga, Vanderbilt Univ.)

SESSION C: SINGLE EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITS (Chair: Balaji Narasimham, Broadcom)

11:30 AM [C-1]: The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Architecture (R. Brewer et al., Vanderbilt Univ., UCLA)
11:45 AM [C-2]: Investigation of Buried-Well Potential Perturbation Effects on SEU in SOI DICE-based Flip-Flop Under Proton Irradiation (K. Sakamoto et al., JAXA, QST, MHI)
12:00 PM [C-3]: Comparison of the Impact of Thermal and High Energy Neutrons in COTS Devices (D. Oliveira et al., UFRGS, STFC, Radiosity Solutions)
12:15 PM [C-4]: Understanding the Key Parameter Dependencies Influencing the Soft-Error Susceptibility of Standard Combinational Logic (N. Pande et al., Univ. of Minnesota)

POSTER PAPERS (Session C):

[PC-1]: Impact of Configuration Scrubbing on Silent Data Corruption in FPGA Cloud Applications (A. Keller, M. Wirthlin, BYU)
[PC-2]: In-Situ Testing of a Multi-Band Software-Defined Radio Platform in a Mixed-Field Irradiation Environment (J. Budroweit et al., DLR, FAU, CERN, BTU)
[PC-3]: The Use of Microprocessor Trace Infrastructures for Radiation-Induced Fault Diagnosis (M. Peña-Fernandez et al., Arquimea, Univ. Carlos III)
[PC-4L]: Effects of Ion-Induced Electric Fields on Leakage Current Degradation in Silicon Carbide Schottky Power Diodes (R. Johnson et al., Vanderbilt, Lipscomb, CFDRC, NASA GSFC, Univ. of Jyväskylä)

Technical Program: Tuesday - Session D & Session E

SESSION D: DOSIMETRY (Chair: Anatoly Rosenfeld, Univ. of Wollongong)

2:25 PM [D-1]: SOI Thin Microdosimeters for High LET Single Event Upset Studies in Fe, O, Xe and Cocktail Ion Beam Fields (B. James et al., Univ. of Wollongong, ANSTO, SINTEF, NIRS, Univ. of Groningen, AIIM)
2:40 PM [D-2]: A Heavy Ion Detector Based on 3D-NAND Flash Memories (M. Bagatin et al., Univ. of Padova, Micron, ESA, STFC)
2:55 PM [D-3]: Simulation and Measurements of Collimator Effects in Proton and Neutron Radiation Testing for Single Event Effects (C. Bélanger-Champagne et al., TRIUMF)

POSTER PAPERS (Session D):

[PD-1]: A Solid-State Microdosimeter for Dose and Radiation Quality Monitoring for Astronauts in Space (S. Peracchi et al., Univ. of Wollongong, ANSTO, NIRS, SINTEF)
[PD-2]: Study of the Deposited Energy Spectra in Silicon by High Energy Neutron and Mixed Fields (C. Cazzaniga et al., STFC, CERN)
[PD-3]: An Innovative and Flexible Real-Time Dosimeter for Radiation Hardness Assurance Tests (F. Di Capua et al., Univ. of Napoli Federico II, INFN, Univ. of Sannio)
[PD-4L]: Temperature-compensated MOS dosimeter fully integrated in a high-voltage 0.35µm CMOS process (S. Carbonetto et al., Univ. of Buenos Aires, CNEA)
[PD-5L]: A Novel System and Method for Optical Fiber Post-Mortem Dose Measurements (D. Francesca et al., CERN)

SESSION E: SPACE AND TERRESTRIAL ENVIRONMENTS (Chair: Giovanni Santin, ESA)

3:45 PM [E-1]: An Update to MOBE-DIC Using Current Monitor Measurements from Galileo (A. Hands et al., Univ. of Surrey, SPARC, DH Consultancy, ESA)
4:00 PM [E-2]: Single Event Effects in Ground Level Infrastructure during Extreme Ground Level Enhancements (A. Dyer et al., Univ. of Surrey)

POSTER PAPERS (Session E):

[PE-1]: Preliminary On-Orbit Results from the GOES-16 and GOES-17 Space Environment In-Situ Suite (SEISS) Dosimeters (E. Dawson et al., Assurance Tech Corp)
[PE-2]: Experimental and Numerical Study of Internal Charging on Spacecraft and Risks of Discharge on Floating Metallic Elements (A. Ben Zaid et al., ONERA, CNES)
[PE-3]: Study of Albedo Neutron Fields and their Impacts on SER as Function Facility and Terrestrial Topologies (G. Hubert, L. Artola, ONERA)

Technical Program: Wednesday - Invited Talk, Session F & Session G

Wednesday, July 10

8:20 AM: Invited Talk – Automated Vehicles and the Road Ahead (Chris Mentzer, SwRI)

SESSION F: BASIC MECHANISMS (Chair: Lili Ding, NINT)

9:40 AM [F-1]: Microdose Reliability (T. Oldham, C. Whitney, C. Arutt, Ball Aerospace)
9:55 AM [F-2]: Ionizing Radiation Tolerance of Stacked Si3N4-SiO2 Gate Insulators for Power MOSFETs (K. Muthuseenu et al., Arizona State Univ.)
10:10 AM [F-3]: Total-Ionizing-Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs with HfO2/Al2O3 Dielectrics (S. Bonaldo et al., Univ. of Padova, Vanderbilt, IMEC)

POSTER PAPERS (Session F):

[PF-1]: Effects of High-Energy Ion Beams on Double-interface CoFeB/MgO Ultrathin Films (B. Wang et al., Beihang Univ., BMTI, CAS, CIAE, Tsinghua)
[PF-2]: Modeling Single-Event Effects in Heterojunction Bipolar Transistors from 14 MeV Neutrons (M. Jasica et al., Sandia)
[PF-3]: Total Ionization Dose Effects of N-type Tunnel Field Effect Transistor (TFET) with Ultra-shallow Pocket Junction (J. Bi et al., IMECAS, Hohai Univ., ICFAI)
[PF-4]: Dose Response of MOS Transistors Irradiated at Low Temperatures (J. Dardié et al., TMI-Orion, IES, CNES, CEA)
[PF-5L]: Observation of Radiation Induced Leakage Current Defects in MOS Oxides with Multi-Frequency Electrically Detected Magnetic Resonance (S. Moxim et al., Penn State, Intel)

SESSION G: RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITS (Chair: Indranil Chatterjee, AIRBUS)

11:00 AM [G-1]: Radiation Induced Variable Retention Time in Dynamic Random Access Memories (V. Goiffon et al., ISAE-SUPAERO, CNES, CEA)
11:15 AM [G-2]: Word Line Dependent Bit Error in 3-D NAND Flash Under Ionizing Radiation (P. Kumari, B. Ray, Univ. of Alabama Huntsville; F. Irom, JPL)
11:30 AM [G-3]: Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs (M. Gorchichko et al., Vanderbilt, Xidian Univ., Jiangnan Univ., IMEC)
11:45 AM [G-4]: Total Ionizing Dose Effects on InGaAs FinFETs with Improved Gate Stack (S. Zhao et al., Vanderbilt, Univ. of Padova, IMEC)
12:00 PM [G-5]: Impact of Total Ionizing Dose on the Threshold Voltage of FOI FinFET with a Property of Tunable Interface Defects (F. Zhang et al., CAS)
12:15 PM [G-6]: TID-Induced Off-State Leakage Current in Radiation-Hardened SOI LDMOS (S. Lei et al., HIT, BMTI, UT Austin, UESTC, Vanderbilt)

POSTER PAPERS (Session G):

[PG-1]: Probing Ion Radiation Effects in Si Crystal by 3D Integrated Resonating Diaphragms (H. Chen et al., Case Western Reserve Univ., Vanderbilt, Aerospace Corp.)
[PG-2]: Silicon Carbide (SiC) Nanoelectromechanical Antifuses Operating in Radiation and High-Temperature Environments (V. Pashaei et al., Case Western Reserve, Vanderbilt)
[PG-3]: Investigation of X-Ray Irradiation Effects on Graphene Nano-Disc Non-Volatile Memory (K. Xi et al., CAS, Maxim Integrated)

Radiation Effects Data Workshop (DW-1 to DW-51L)

Chair: Kirby Kruckmeyer, Texas Instruments

[DW-1]: Guide to the 2018 IEEE Radiation Effects Data Workshop Record (D. Hiemstra, MDA)
[DW-2]: Total Dose Performance at High and Low Dose Rate of CMOS, BiCMOS, and Bipolar Low Dropout Voltage Regulators (D. Hiemstra et al., MDA, Univ. of Saskatchewan)
[DW-3]: Total Dose Homogeneity of Commercial-off-the-Shelf BiCMOS and Bipolar Voltage References at Low Dose Rate (D. Hiemstra et al., MDA, Univ. of Saskatchewan)
[DW-4]: 0.040 rad(Si)/s Total Dose Testing of Renesas Parts Proposed for the Europa Clipper Mission (N. Van Vonno et al., Renesas)
[DW-5]: A Comparison of 0.040 rad(Si)/s and 0.010 rad(Si)/s Total Dose Results of Renesas Parts Proposed for the Europa Clipper mission (N. Van Vonno et al., Renesas)
[DW-6]: Radiation Degradation of Temperature Dependences of Electrical Parameters of Bipolar Operational Amplifiers (A. Bakerenkov et al., MEPhI)
[DW-7]: Radiation Evaluation of the TPS7H2201-SP Load Switch (J. Cruz-Colon et al., TI)
[DW-8]: Radiation Effects Characterization of TI THS4541 Rail-to-Rail Output 850 MHz Fully Differential Amplifier (V. Narayanan et al., TI)
[DW-9]: Radiation Evaluation of the ADS1278-SP Radiation Hardened 24-Bit 8-Ch Simultaneous-Sampling Delta-Sigma ADC (R. Gooty, TI)
[DW-10]: Single-Event Effects Testing for the ADC12DJ3200QML-SP 12-bit, Dual 3.2-GSPS or Single 6.4-GSPS, RF-Sampling, JESD204B, Analog-to-Digital Converter (K. Lewis et al., TI USA, TI Germany)
[DW-11]: Radiation Effects Characterization of Commercial Multi-Channel Digital to Analog Converters for Spaceflight Applications (A. Daniel et al., NASA JPL)
[DW-12]: Single Event Transient and Single Event Upset Characterization of a Cobham Designed 3.125 Gbps Crosspoint Switch (M. Von Thun et al., Cobham)
[DW-13]: Characterization of the Effects of Proton-Induced Total Ionizing Dose and Displacement Damage on the UC1875 Controller (S. Messenger et al., Northrop Grumman)
[DW-14]: Characterization of the Effects of 250 MeV Proton-Induced Total Ionizing Dose and Displacement Damage on the HCPL-625K Optocoupler (S. Messenger et al., Northrop Grumman)
[DW-15]: TID and SEE Responses of Rad-Hard A/D Converter RHFAD128 (G. Chaumont et al., STMicroelectronics, CNES)
[DW-16]: Single Event Effects and Total Ionizing Dose Test Results for a Current Mode Controller Evaluated for Use in a Harsh Space Radiation Environment (A. Bozovich et al., NASA JPL)
[DW-17]: Heavy Ion Single Event Effects Results for PWM5032 Pulse Width Modulator Controller (J. Likar et al., JHU APL, Cobham)
[DW-18]: Proton, Gamma and Neutron Irradiation of a 10 V Precision Voltage Reference (R. Dungan et al., Northrop Grumman)
[DW-19]: Single Event Dielectric Rupture Characterization of Microchip High Voltage Devices (D. Truyen et al., Microchip France)
[DW-20]: Glenair Optical 5 Gbps and 10 Gbps Transceiver Radiation Test Summary (R. Logan et al., Glenair, Troxel Aerospace)
[DW-21]: Heavy Ion Single Event Latchup Measurements of a Focal Plane Imager at Room and Cryogenic Temperatures (F. Irom et al., NASA JPL)
[DW-22]: Test Results of Proton Single-Event Effects Conducted by the Jet Propulsion Laboratory (G. Allen et al., NASA JPL)
[DW-23]: NASA Goddard Space Flight Center’s Compendium of Total Ionizing Dose, Displacement Damage Dose, and Single Events Effects Test Results (A. Topper et al., SSAI, NASA GSFC, Lentech)
[DW-24]: Compendium of Recent Radiation Test Results from the Johns Hopkins University Applied Physics Laboratory (C. Pham, JHU/APL)
[DW-25]: Radiation Effects Testing of Selected Voltage Regulator Microcircuits with Heavy Ions and Protons (R. Koga, Aerospace Corp.)
[DW-26]: The Aerospace Corporation’s Compendium of Recent Single Event Effect Results (S. Davis et al., Aerospace Corp., LANL)
[DW-27]: Single Event Effect Test Results for Candidate Spacecraft Electronics (T. Maksimenko et al., ISDE, ElTest)
[DW-28]: Heavy Ion Test Results for Frequency Synthesizers (I. Maslennikova et al., ISDE)
[DW-29]: Single-event Evaluation of Xilinx 16 nm UltraScale+™ High-Bandwidth Memory (HBM) Enabled FPGA (Y. Chen et al., Xilinx)
[DW-30]: Recent SEE Results for Snapdragon SOCs (S. Guertin et al., NASA JPL)
[DW-31]: Single Event Upset Characterization of the Cyclone V Field Programmable Gate Array Using Proton Irradiation (Q. Chen et al., XMTI, Univ. of Saskatchewan, MDA)
[DW-32]: BRE440 Heavy Ion SEE Test Summary (N. Kent et al., Moog Broad Reach, Troxel Aerospace)
[DW-33]: ATmegaS128 8-bit Microcontroller Total Ionizing Dose and Single Event Effects (G. Bourg-Cazan, J. Vrignaud, Microchip)
[DW-34]: ATmegaS64M1 8-bit Microcontroller Total Ionizing Dose and Single Event Effects (J. Bernard, J. Vrignaud, Microchip)
[DW-35]: Stratix 10 FPGA Neutron Radiation Test Results (A. Keller, W. Keller, BYU)
[DW-36]: Neutron Induced Single Event Upset (SEU) Testing of Commercial Flash Memory Devices (M. Allenspach et al., Radiation Test Solutions, Cobham, Fluor Marine Propulsion)
[DW-37]: Radiation-Induced Errors at Elevated Linear Energy Transfer Levels and Magnetic Error Rate Interactions in Magnetic Tunnel Junctions (R. Katti, Honeywell)
[DW-38]: Total Dose and Heavy Ion Radiation Response of 55 nm Avalanche Technology Spin Transfer Torque MRAM (J. Ingalls et al., NSWC Crane, Avalanche Tech)
[DW-39]: SEE Testing of DDR2 Memories (D. Hansen et al., Data Devices Corp.)
[DW-40]: A SET Study on SRAM Memory (P. Wang et al., 3D PLUS, iRoC, ESA ESTEC, HIREX, Radiation Assured Devices)
[DW-41]: Single Event Effect Characterization of High Density SRAMs in Bulk and SOI Technologies (Y. Yu et al., CEPREI)
[DW-42]: Laser-Induced Micro SEL Characterization of SRAM Devices (M. Yingqi et al., NSSC, CAS)
[DW-43]: Fast-Neutron Beam Testing at the University of Washington Medical Cyclotron Facility (D. Argento et al., UW Medical Center)
[DW-44L]: Radiation Tests of a 500 °C Durable 4H-SiC JFET Integrated Circuit Technology (J. Lauenstein et al., NASA GSFC, NASA GRC)
[DW-45L]: A summary of Mil Std 750, method 1017 neutron irradiation tests performed on JANSR2N3700, JANSR2N2369, JANSR2N2222 and JANSR2N2907 BJTs (P. Schimel, Microchip)
[DW-46L]: Impact of Single Event Effects on Key Electronic Components for COTS-based Satellite systems (R. Monreal et al., SwRI)
[DW-47L]: A TID and SEE Characterization of Multi-Terabit COTS 3D NAND Flash (E. Wilcox, M. Campola, NASA GSFC)
[DW-48L]: Single-Event Characterization of the 16 nm FinFET Xilinx UltraScale+™ RFSoC Field-Programmable Gate Array under Proton Irradiation (P. Davis et al., Sandia)
[DW-49L]: Proton Characterization of RTG4 Flash-Based FPGA for LEO Environment (N. Rezzak et al., Microchip)
[DW-50L]: Heavy Ion SEE Testing of Microchip Integrated Motor Controller LX7720 (M. Sureau, N. Rezzak, Microchip)
[DW-51L]: Degradation Measurement of Kinect Sensor Under Fast Neutron Beamline (Z. Khanam et al., Univ. of Essex, Rutherford Appleton Lab, Univ. of Birmingham)

Technical Program: Thursday - Invited Talk, Session H & Poster Session

Thursday, July 11

7:00 - 8:30 AM: Breakfast with Young Professionals Presentation (Dr. Heather Quinn, LANL)
8:30 - 9:45 AM: Invited Talk – Parker Solar Probe: A Mission to Touch the Sun (Dr. Jim Kinnison, JHU APL)

SESSION H: PHOTONIC DEVICES AND INTEGRATED CIRCUITS (Chair: Vincent Goiffon, ISAE-SUPAERO)

9:50 AM [H-1]: Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach-Zehnder Modulator in a Si/SiGe Integrated Photonics Platform (G. Tzintzarov et al., Georgia Tech, NRL, IHP)
10:05 AM [H-2]: Comparison of X-ray and Electron Radiation Effects on Dark Current Non-Uniformity and Fluctuations in CMOS Image Sensors (A. Le Roch et al., ISAE-SUPAERO, CNES, CEA DAM, NRL)
10:20 AM [H-3]: Pre- and Post-Annealing Discrete Switching Fluctuations of Dark Count Rate in Two Proton-Irradiated CMOS SPAD Structures (F. Di Capua et al., Univ. di Napoli Federico II, INFN, Univ. della Calabria, CNR - SPIN)
11:05 AM [H-4]: In Situ Deep-level Transient Spectroscopy and Dark Current Measurements of Proton-Irradiated In0.54Ga0.46As Photodiodes (G. Nelson et al., RIT, Univ. at Albany, Dynamic Radiation Solutions)
11:20 AM [H-5]: Radiation Effects on WDM and DWDM Architectures of Pre-Amplifier and Boost-Amplifier (A. Ladaci et al., CEA, CNES, iXblue, Univ. de Saint Etienne, Politecnico di Bari)
11:35 AM [H-6]: Radiation-Response of Distributed Feedback (DFB) Bragg Gratings for Space Applications (A. Morana et al., Lab Hubert Curien, iXBlue Photonics)
11:50 AM [H-7]: Transient and Steady State Radiation Response of Phosphosilicate Optical Fibers: Influence of H2 (S. Girard et al., Univ. de Saint Etienne, CEA DAM, CERN, Univ. di Palermo)

POSTER PAPERS (Session H):

[PH-1]: Response of Waveguide-Integrated Germanium-on-Silicon p-i-n Photodiodes to Neutron Displacement Damage (P. Goley et al., Georgia Tech, Sandia)
[PH-2]: Proton Radiation Effects on InGaAs/InP SPADs (A. Tosi et al., Politecnico di Milano, Micro Photon Device, Univ. di Padova, INFN)
[PH-3]: Comparison of 1D and 3D Electric Field Enhancement Analytical Models to Calculate the Dark Current Non-Uniformity (K. Lemiere, C. Inguimbert, T. Nuns, ONERA)
[PH-4]: Performances of Radiation-Hardened Single-Ended Raman Distributed Temperature Sensors Using COTS Fibers (A. Morana et al., Lab Hubert Curien, Viavi Solutions, iXBlue Photonics)
[PH-5]: Proton Irradiation Effect on High Efficient Organic-Inorganic Metal Halide Perovskite Solar Cell (X. Zhang et al., CAS, Beijing Jiaotong Univ., HIT)
12:05 - 1:45 PM: Lunch with Women in Engineering (WIE) Presentation
1:45 - 4:30 PM: Poster Session Introduction (Chair: Ethan Cannon, Boeing)
4:30 - 6:30 PM: Radiation Effects Committee Annual Open Meeting

Technical Program: Friday - Invited Talk, Session I & Session J

Friday, July 12

8:30 - 9:45 AM: Invited Talk – Spanish Exploration and the Beginnings of Texas Natural History (Dr. Jesús F. de la Teja, CEO, Texas State Historical Association)

SESSION I: HARDENING BY DESIGN (Chair: Jeffrey Kauppila, Vanderbilt University)

9:50 AM [I-1]: DFF Layout Variations in CMOS SOI – Analysis of Hardening by Design Options (J. Black et al., Sandia, Vanderbilt)
10:05 AM [I-2]: Improving the Reliability of TMR with Non-Triplicated I/O on SRAM FPGAs (M. Cannon et al., BYU)
10:20 AM [I-3]: Applying Compiler-Automated Software Fault Tolerance to Multiple Processor Platforms (J. Benjamin et al., BYU, LANL)

POSTER PAPERS (Session I):

[PI-1]: A Radiation-Tolerant D Flip-Flop Designed for Low-Voltage Applications (G. Poe et al., Vanderbilt, ISDE)
[PI-2]: RHBD Sub-Sampling Phase-Locked Loop in 32 nm PD-SOI (E. Richards et al., Vanderbilt, Univ. of Tennessee Chattanooga)
[PI-3]: A SET-tolerant High-frequency Multi-biased Multiphase Voltage-Controlled Oscillator for Phase Interpolator-based Clock and Data Recovery (H. Yuan et al., NUDT, HIRFL, CIAE, CAS)
[PI-4]: Using SEU Mitigation Techniques to Improve SER Performance of FPGA-based Networking Systems (H. Rowberry, A. Keller, M. Wirthlin, BYU)
[PI-5]: High Total Ionizing Dose Effects on a Column Parallel Radiation Hardened Single-Slope-Analog-to-Digital Converter (S. Rizzolo et al., ISAE SUPAERO, CEA DAM, F4E, Oxford Technologies, SCK-CEN)

SESSION J: HARDNESS ASSURANCE (Chair: Thomas Turflinger, Aerospace Corporation)

11:10 AM [J-1]: Risk Methodology for SEE Caused by Proton-Induced Fission of High-Z Materials in Microelectronics Packaging (R. Ladbury, NASA GSFC)
11:25 AM [J-2]: Data Retention Voltage Based Analysis of Systematic Variations in SRAM SEU Hardness: A Possible Solution to Synergetic Effects of TID (D. Kobayashi et al., ISAS/JAXA, Univ. of Tokyo, QST, MHI)
11:40 AM [J-3]: Single Event Latchup Sensitive Volume Model for a 180-nm SRAM Test Structure (P. Wang et al., Vanderbilt, Sandia, Jazz Semiconductor)
11:55 AM [J-4]: Energy-Dependent Effective Cross Sections of Neutron Interactions with Semiconductor Devices (S. Wender et al., LANL, Vanderbilt)
12:10 PM [J-5]: Evaluating Elevated Temperature DRAM Stuck Bit Sensitivity at Room Temperature (S. Guertin et al., JPL, San Diego State Univ., Princeton, Cal Poly)

POSTER PAPERS (Session J):

[PJ-1]: Silicon Carbide Power MOSFETs Under Neutron Irradiation: Failure In Time Demonstration and Long Term Reliability Degradation Evaluation (K. Niskanen et al., Univ. of Montpellier, ENSICAEN-CRISMAT, CEA, Airbus)
[PJ-2]: Application of Bayesian Methodology to Radiation Hardness Assurance and Spacecraft Reliability (A. Coburger, J. Likar, C. Smith, JHU APL)
[PJ-3]: Design-of-Experiments and Monte-Carlo Methods in Upset Rate-Calculations (D. Hansen, DDC)
[PJ-4L]: Direct Ionization Impact on Accelerator Mixed-Field Soft Error Rate (R. Garcia Alia et al., CERN, ESA, Univ. of Jyväskylä, Univ. of Montpellier 2)
[PJ-5L]: Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs (R. Austin et al., Vanderbilt Univ.)
12:25 PM: End of Conference

RESG News, Publications & Awards

RESG NEWS: Executive Chairman: Janet Barth; Executive Vice-Chair: Robert Reed. Purpose of the Radiation Effects Committee (REC) of IEEE NPSS is to advance the theory and application of radiation effects and allied sciences. Publications:

IEEE Transactions on Nuclear Science (TNS), special issue published in January.
Radiation Effects Data Workshop Record, published annually in October.

IEEE FELLOWS (Jan 1, 2019):

Dale McMorrow (NRL), “for contributions to laser-based methodologies for simulating single-event effects in digital devices”.

2018 AWARDS:

2018 Outstanding Conference Paper Award: “Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs” (A. Ildefonso et al.)
2018 Outstanding Conference Meritorious Paper Award: “Directional Dependence of Co-60 Irradiation on the Total Dose Response of Flash Memories” (M. J. Gadlage et al.)
2018 Outstanding Student Paper Award: “Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs” (A. Ildefonso et al.)
2018 Outstanding Data Workshop Presentation Award: “NASA Goddard Space Flight Center’s Compendium of Recent Single Event Effects Results” (M. V. O’Bryan et al.)
2018 Radiation Effects Award: Dr. Rocky Koga (The Aerospace Corporation) for sustained contributions to single-event testing.

Conference Information, Registration, Logistics & Hotel

Conference Information:

Host Hotel: San Antonio Marriott Rivercenter Hotel, 101 Bowie Street, San Antonio, TX 78205 (Tel: 210-223-1000). Negotiated group rate: $169.00/ ni g h t; G o v er nm e n t r a t e :$ 126.00/night.
Business Center: UPS Store located on third floor.
Child Care Reimbursement: Up to $400 per family funded by NPSS AdCom (deadline June 1, 2019).
Registration Desk Hours: Sun July 7 (5-8 PM), Mon/Tue July 8-9 (7:30 AM-5 PM), Wed/Thu July 10-11 (7:30 AM-3 PM), Fri July 12 (7:30-10 AM).
Cancellation Policy: $50 processing fee on refunds requested by June 7, 2019.
Transportation: San Antonio International Airport (SAT) ~8 miles north; Super Shuttle / Taxis available.

Industrial Exhibits & Directory

Industrial Exhibits: Grand Salons G-H-I-J-K-L-M. Hours: Tuesday July 9 (7:00 AM – 5:30 PM), Wednesday July 10 (7:00 AM – 2:00 PM). Industrial Exhibits Chair: Gregg Panning (The Aerospace Corporation).

List of Exhibitors & Booth Numbers:

3D Plus USA, Inc. (#206)
Advantest (#325)
Alpha Data (#103)
Alphacore, Inc. (#406)
Analog Devices (#226)
Apogee Semiconductor (#418)
BAE Systems (#218)
Boeing Research & Technology (#321)
Cobham Semiconductor Solutions (#119-121)
Crane Electronics, Inc. (#408)
Crocker Nuclear Lab (#404)
Cypress Semiconductor / DPACI (#107)
Data Device Corporation (DDC) (#319)
EMPC (#220)
FASTRAD® (#123)
Foss Therapy Services (#426)
Freebird Semiconductor Corporation (#222)
Glenair, Inc. (#210)
Honeywell (#208)
Intersil Space Products (#114-116)
IR HiRel Products, An Infineon Technologies Company (#118)
iXblue (#224)
J.L. Shepherd & Associates (#309)
Lawrence Berkeley National Laboratory (#327)
Los Alamos National Laboratory (#422)
Microchip Technology (#102)
Micropac Industries, Inc. (#110)
Micross (#402)
MIT Lincoln Laboratory (#323)
NASA NEPP (#212)
National Reconnaissance Office (#112)
Northrop Grumman Corporation (#122)
ON Semiconductor (#313)
Phoenix, LLC (#108)
Pulscan (#120)
Radiation Test Solutions, Inc. (#105)
Robust Chip (#420)
Sandia National Laboratories (#303)
Silvaco, Inc. (#109)
SkyWater Technology Foundry (#412)
Southwest Research Institute (#125-127)
STMicroelectronics, Inc. (#410)
Texas A&M Cyclotron Institute (#311)
Texas Instruments (#202-204)
University of Washington Medical Cyclotron Facility (#307)
Vanderbilt University / ISDE (#424)
VORAGO Technologies (#104)
VPT, Inc. (#111-113)
Xilinx (#305)

Social Program:

Welcome Reception: Sunday, July 7, 6:00 - 9:00 PM (Salon I)
Highlights of San Antonio Tour: Tuesday, July 9, 9:25 AM - 3:45 PM (Alamo, Riverboat ride to Pearl District, Witte Museum)
Industrial Exhibits Reception: Tuesday, July 9, 5:30 - 7:00 PM (Salon I)
Conference Social: Wednesday, July 10, 6:00 - 10:00 PM at Buckhorn / Texas Ranger Museum (Tex-Mex buffet, exhibits, shuttles from 5:30 PM)
IEEE Young Professionals Breakfast: Thursday, July 11, 7:00 - 8:30 AM (Speaker: Dr. Heather Quinn, LANL)
Missions Tour: Thursday, July 11, 9:25 AM - 3:00 PM (Missions Concepcion, San Jose, Espada, and El Mercado)
Women in Engineering Lunch: Thursday, July 11, 12:05 - 1:45 PM (“Rising Above Every Day Challenges in Work and Life”)
Aerobics and Stretching: Tue/Wed/Thu 6:00 - 7:00 AM (Room 12, led by Dave Bushmire)

Local Activities & Attractions:

San Antonio River Walk (Paseo del Rio), GO RIO river cruises and water taxis
The Saga video art projection at San Fernando Cathedral
Brackenridge Park, San Antonio Zoo, Japanese Tea Garden
Museums: Briscoe Western Art Museum, McNay Art Museum, San Antonio Museum of Art (SAMA), Institute of Texan Cultures, Centro de Artes
Historic Districts: La Villita Historic Arts Village, Market Square (El Mercado), King William Historic District, Southtown Arts District
Family Fun: The DoSeum, Magik Children’s Theatre, Tower of the Americas, Ripley’s Believe It or Not!, Six Flags Fiesta Texas, SeaWorld San Antonio, Schlitterbahn New Braunfels, Natural Bridge Caverns
Golf: TPC San Antonio (AT&T Oaks/Canyons), La Cantera, Alamo City Golf Trail, Quarry Golf Course

2019 Conference Committee & Steering Group

2019 Conference Committee:

General Chair: John Stone (Southwest Research Institute)
Technical Chair: Simone Gerardin (University of Padova)
Local Arrangements Chair: Brian Sierawski (Vanderbilt University)
Short Course Chair: Stephen C. Moss (The Aerospace Corp., retired)
Publicity Chair: Teresa Farris (Archon-LLC)
Finance Chair: Michael Campola (NASA GSFC)
Awards Chair: Christian Poivey (European Space Agency)
Industrial Exhibits Chair: Gregg Panning (The Aerospace Company)

Radiation Effects Steering Group (RESG):

Executive Chair: Janet Barth (NASA Retired Emeritus)
Executive Vice-Chair: Robert Reed (Vanderbilt University)
Past Chair: Allan Johnston (J-K Associates)
Senior Member-at-Large: Ethan Cannon (Boeing)
Member-at-Large: Julien Mekki (CNES)
Junior Member-at-Large: Kyle Miller (Ball Aerospace)
Secretary: Sarah Armstrong (NWSC)
Vice-Chair, Publications: Dan Fleetwood (Vanderbilt University)
Vice-Chair, Publicity: Teresa Farris (Archon-LLC)
Special Publications Assignment: Paul V. Dressendorfer (Sandia, ret.)
Vice-Chair, Finance / RESG Delegate: Marty Shaneyfelt (Sandia)
Web Developer: Dolores Black (Sandia)
Vice-Chair, 2019 Conference: John Stone (SwRI)
Vice-Chair, 2020 Conference: Hugh Barnaby (ASU)
Vice-Chair, 2021 Conference: Steve McClure (NASA JPL)
Vice-Chair, 2022 Conference: Tom Turflinger (Aerospace Corp.)
NPSS AdCom Members: Ken Galloway (Vanderbilt), Jeffrey D. Black (Sandia), Keith Avery (AFRL)
RADECS Liaison: Philippe Paillet (CEA/DIF)

2020 First Call for Papers Announcement

ANNOUNCEMENT AND FIRST CALL FOR PAPERS 2020 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2020) July 20-24, 2020 | Hilton Buffalo Thunder, Santa Fe, New Mexico

Paper Summary Deadline: February 7, 2020

Conference Committee for 2020:

General Chair: Hugh Barnaby (Arizona State University)
Technical Program Chair: Philippe Adell (Jet Propulsion Laboratory)
Short Course Chair: Kenneth Galloway (Vanderbilt University)
Local Arrangements Chair: Michael McLain (Sandia National Laboratories)
Publicity Chair: Teresa Farris (Archon-LLC)
Finance Chair: Daniel Loveless (Univ. of Tennessee Chattanooga)
Awards Chair: Marta Bagatin (University of Padova)
Industrial Exhibits Chair: Scott Jordan (JSTF Inc.)

Summary Submission Requirements: Single PDF file with cover page and 2-4 page summary describing 12-minute oral or poster work. Submit via www.nsrec.com.