Ultra-Fast Modular Solid-State Pulse Power Generators

Summary

This poster presents research on the design and implementation of ultra-fast modular solid-state pulsed-power generators for plasma production. By utilizing ultra-fast GaN transistors and novel gate driving techniques within an impedance-matched modular structure, the proposed system achieves faster rise times, higher plasma efficiency, reduced signal reflections, and flexible scalability.

IT2 TU/e EINDHOVEN UNIVERSITY OF TECHNOLOGY Ultra-Fast Modular Solid-State Pulse Power Generators M. Feizi, B. J. D. Vermulst and T. Huiskamp

What – Design and implementation of a pulsed-power generator for plasma production

• More efficient plasma (Fig. 1) through ultra-fast rise time and high repetition rate. • Modular and flexible structure (Fig. 2). • Based on ultra-fast GaN transistors.

Why – State-of-the-art pulsed-power generators are not fast enough and are difficult to scale up

• Fast rise time increases the plasma efficiency. • Faster semiconductor switching speed needed. • Signal reflections need to be reduced. • Modular approach essential for scale-up

How – Ultra-fast switched GaN transistors in a modular impedance-matched structure

• GaN transistors are used, which require a lower gate charge, hence allow to switch faster. • Novel optimized gate driving techniques to further improve switching speed. • Module-based approach through impedance-matched structure, avoiding signal reflections (Fig. 3 & Fig. 4).

Figures and Descriptions

Fig. 1: Plasma generation. Fig. 2: Solid-state pulse power generator. Fig. 3: Proposed pulsed-power generator based on combined charging method. Fig. 4: Proposed structure for the modular system.

Department of Electrical Engineering, Electromechanics and Power Electronics Group, Power Electronics Lab | TU/e PEL